| 摘要 |
PURPOSE:To enable formation of an implantation layer having uniform depth entirely over a specimen by rotating the specimen synchronously with deflection scanning of ion beam thereby making constant the angle of ion beam against the surface of the specimen. CONSTITUTION:In order to coincide the angle of deflection scanning ion beam 15 against a specimen board 16 with the angle of the ion beam 15 against the specimen board 16 upon incident to the central portion of said board 16 even when deflection scanning the ion beam 15 between the maximum angled thetaand -theta through X-electrode 13, the specimen board 16 is rotated between the maximum angles theta and -theta around Y-axis through servo mechanism 18 to be fed with a triangular wave 13b thus to synchronize the rotation of the specimen board 16 with the triangular wave 13b produced through X-sweep generator 13a. Similarly, the specimen board 16 is rolled around X-axis through servo mechanism 17 for deflection scanning of ion beam 15 in the direction of Y-axis through Y-electrode 12.
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