发明名称 |
TEST METHOD FOR SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To obtain an optimum rate in a test rate for shortening a test time independently of a test environment in a test method for a semiconductor device. SOLUTION: In advance of a normal function test of the original test method for the semiconductor device, a SHMOO of each function test is done as a pretest and a degree of allowance of the test rate is calculated from the SHMOO results. The test rate is corrected and shortened corresponding to this calculated degree of the allowance, and thereafter the function test for the semiconductor device is done using the test rate normally corrected. Therefore the test rate is properly shortened and whole test time for the semiconductor can be shortened.
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申请公布号 |
JP2002156424(A) |
申请公布日期 |
2002.05.31 |
申请号 |
JP20000352900 |
申请日期 |
2000.11.20 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
SHINDO NAOKI |
分类号 |
G01R31/30;G01R31/317;G01R31/3183;G01R31/319;G01R31/3193;(IPC1-7):G01R31/318 |
主分类号 |
G01R31/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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