发明名称 LASER STOP LAYER FOR FOIL-BASED METALLIZATION OF SOLAR CELLS
摘要 Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. For example, a method of fabricating a solar cell involves forming a plurality of alternating N-type and P-type semiconductor regions in or above a substrate. The method also involves forming a paste between adjacent ones of the alternating N-type and P-type semiconductor regions. The method also involves curing the paste to form non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions. The method also involves adhering a metal foil to the alternating N-type and P-type semiconductor regions. The method also involves laser ablating through the metal foil in alignment with the locations between the alternating N-type and P-type semiconductor regions to isolate regions of remaining metal foil in alignment with the alternating N-type and P-type semiconductor regions. The non-conductive material regions act as a laser stop during the laser ablating.
申请公布号 US2016163901(A1) 申请公布日期 2016.06.09
申请号 US201414563723 申请日期 2014.12.08
申请人 Hsia Benjamin Ian;Harley Gabriel;Kim Taeseok;Sewell Richard Hamilton;Kim Sung Dug 发明人 Hsia Benjamin Ian;Harley Gabriel;Kim Taeseok;Sewell Richard Hamilton;Kim Sung Dug
分类号 H01L31/0475;H01L31/18;C09D7/12;H01L31/028;H01L31/0224 主分类号 H01L31/0475
代理机构 代理人
主权项 1. A method of fabricating a solar cell, the method comprising: forming a plurality of alternating N-type and P-type semiconductor regions in or above a substrate; forming a paste between adjacent ones of the alternating N-type and P-type semiconductor regions; curing the paste to form non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions; adhering a metal foil to the alternating N-type and P-type semiconductor regions; and laser ablating through the metal foil in alignment with the locations between the alternating N-type and P-type semiconductor regions to isolate regions of remaining metal foil in alignment with the alternating N-type and P-type semiconductor regions, wherein the non-conductive material regions act as a laser stop during the laser ablating.
地址 Fremont CA US