发明名称 |
LASER STOP LAYER FOR FOIL-BASED METALLIZATION OF SOLAR CELLS |
摘要 |
Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. For example, a method of fabricating a solar cell involves forming a plurality of alternating N-type and P-type semiconductor regions in or above a substrate. The method also involves forming a paste between adjacent ones of the alternating N-type and P-type semiconductor regions. The method also involves curing the paste to form non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions. The method also involves adhering a metal foil to the alternating N-type and P-type semiconductor regions. The method also involves laser ablating through the metal foil in alignment with the locations between the alternating N-type and P-type semiconductor regions to isolate regions of remaining metal foil in alignment with the alternating N-type and P-type semiconductor regions. The non-conductive material regions act as a laser stop during the laser ablating. |
申请公布号 |
US2016163901(A1) |
申请公布日期 |
2016.06.09 |
申请号 |
US201414563723 |
申请日期 |
2014.12.08 |
申请人 |
Hsia Benjamin Ian;Harley Gabriel;Kim Taeseok;Sewell Richard Hamilton;Kim Sung Dug |
发明人 |
Hsia Benjamin Ian;Harley Gabriel;Kim Taeseok;Sewell Richard Hamilton;Kim Sung Dug |
分类号 |
H01L31/0475;H01L31/18;C09D7/12;H01L31/028;H01L31/0224 |
主分类号 |
H01L31/0475 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating a solar cell, the method comprising:
forming a plurality of alternating N-type and P-type semiconductor regions in or above a substrate; forming a paste between adjacent ones of the alternating N-type and P-type semiconductor regions; curing the paste to form non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions; adhering a metal foil to the alternating N-type and P-type semiconductor regions; and laser ablating through the metal foil in alignment with the locations between the alternating N-type and P-type semiconductor regions to isolate regions of remaining metal foil in alignment with the alternating N-type and P-type semiconductor regions, wherein the non-conductive material regions act as a laser stop during the laser ablating. |
地址 |
Fremont CA US |