发明名称 DETECTION CIRCUIT
摘要 Provided by the present invention is a detection circuit which avoids detection error immediately after the power of the detection circuit is turned on. The detection circuit comprises: an output transistor which is installed between a voltage input terminal and a voltage output terminal; and a load open detection circuit which detects the open state of a load being in contact with the voltage output terminal. The output circuit of the load open detection circuit has a composition in which a first transistor and a second transistor are in contact with each other in series, wherein the first transistor is connected with the output transistor by sharing a gate and the second transistor is connected in series and enables a load open detecting signal to be inputted to the gate. The first transistor is formed to be turned off when the output transistor is turned off.
申请公布号 KR20160091284(A) 申请公布日期 2016.08.02
申请号 KR20160008244 申请日期 2016.01.22
申请人 SII SEMICONDUCTOR CORPORATION 发明人 SUGIURA MASAKAZU;IGARASHI ATSUSHI
分类号 G01R31/02;G01R31/28;H03K17/00 主分类号 G01R31/02
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