| 摘要 |
PROBLEM TO BE SOLVED: To obtain a lamination type semiconductor ceramic element capable of providing an excellent ohmic contact between a semiconductor ceramic layer and an internal electrode, having a small size and a low resistance, a sufficient resistance change width, capable of actualizing a high breakdown strength, having positive temperature characteristics of resistance. SOLUTION: This barium titanate-based semiconductor ceramic powder having <=1.0 μm average particle diameter, >=1.0050 ratio of axis c/a, >=0.990 and <=1.010 ratio of Ba site/Ti cite and forming a solid solution of donor element such as La is used as barium titanate-based semiconductor ceramic powder which uses a nickel-based metal in internal electrodes 2 and is baked to form a semiconductor ceramic layer 3. |
