发明名称 LAPPING POLISHING CLOTH, AND METHOD OF LAPPING SILICON ELECTRODE FOR PLASMA ETCHING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a lapping polishing cloth which can reduce occurrence of chipping. <P>SOLUTION: According to the lapping polishing cloth, a number of projections are regularly arranged on a substrate, and each projection is formed into a truncated conical shape having an angle &theta; formed by an upper surface and a side surface thereof set to the range of 105&deg;<&theta;&le;135&deg;, or formed into an inverted truncated conical shape having the angle &theta; formed by the upper surface and the side surface set to the range of 45&deg;&le;&theta;<75&deg;. Further provided that a total area of the upper surfaces of the projections is represented by S<SB>1</SB>, a polishing cloth surface area by S<SB>2</SB>, a height of each projection by H, a diameter of each upper surface by D<SB>1</SB>, and a diameter of a pore to be formed in a polishing object by D, respectively, the following relationships hold: 0.1S<SB>2</SB>&le;S<SB>1</SB>&le;0.9S<SB>2</SB>, 50 &mu;m&le;H&le;1 mm, and D<SB>1</SB>&ge;2D. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009082995(A) 申请公布日期 2009.04.23
申请号 JP20070251881 申请日期 2007.09.27
申请人 COVALENT MATERIALS CORP 发明人 SHIGAKI YASUYO
分类号 B24B37/26;H01L21/3065 主分类号 B24B37/26
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