| 摘要 |
A thin film infrared sensor structure and a manufacturing process thereof capable of increasing a C axis directional feature of a high dielectric are disclosed. In the thin film infrared sensor structure, a substrate(11) is divided into a first portion and a second portion which are formed at regular intervals. A lower electrode(12) is formed on an area between the first and second portions of substrate(11) and at a predetermined portion of a surface of substrate(11). A superconductive layer(13) is formed at an upper portion of lower electrode(12) in the area between the first and second portions of substrate(11) and at one end side of lower electrode(12). An upper electrode(14) is formed on superconductive layer(13) and on the first portion of substrate(11).
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