| 摘要 |
PURPOSE:To provide a photomask and its forming method to form a LSI fine pattern, by using a conductive base layer material for electron beam lithography to obtain a stable and precise fine pattern. CONSTITUTION:A light-shielding film formed in a pattern on a glass substrate 1 consists of a resin film 2 containing silver halide. The forming method includes the following processes. A process to form the resin film 2 containing silver halide on the glass substrate 1, a process to deposit a resist film 3 for electron beam on the resin film 2 containing silver halide, a process to pattern the resist film 3 for electron beam by electron beam exposure method, a process to pattern the resin film 2 containing silver halide by anisotropic dry etching method using the patterned resist film 3 for electron beam as a mask, and a process to remove the resist film 3 for electron beam on the patterned resin film 2 containing silver halide. |
