SEMICONDUCTOR INTEGRATED CIRCUIT AND FABRICATING METHOD THEREOF,申请号KR19890014558-传众专利搜索

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发明名称	SEMICONDUCTOR INTEGRATED CIRCUIT AND FABRICATING METHOD THEREOF
摘要
申请公布号	KR940002834(B1)	申请公布日期	1994.04.04
申请号	KR19890014558	申请日期	1989.10.11
申请人	TOSHIBA CO., LTD.	发明人	MOMOSE, HIROSHI
分类号	H01L29/73;H01L21/331;H01L21/8249;H01L27/06;H01L27/07;H01L29/732;H01L29/78;(IPC1-7):H01L27/08	主分类号	H01L29/73
代理机构		代理人
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