| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for easily obtaining IGBTs, that have a small amount for leakage current, and a high withstand voltage. SOLUTION: In this method for manufacturing the IGBTs, an n-layer 2 is formed in a wafer W through ion implantation and diffusion (2), a wafer 20 is laminated to the wafer W (3), grinding is carried out by specific thickness from a surface opposite to a surface, where the n layer of the wafer is formed (4), a MOSFET element is formed on one surface of the ground wafer (5), the laminated wafer is removed (6), and ion implantation is made to the other surface of the ground wafer W for forming a p layer 4 and a collector electrode is formed (7), thus increasing diffusion temperature since the n layer is formed before an MOS is formed, reducing crystal defects due to the ion implantation for reducing the leakage current, since the activation rate in impurities for doping an n-layer, and preventing punch-through from easily being carried out for obtaining the withstand voltage, since the deep n-layer is formed.
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