ONE-DIMENSIONAL CHANNEL TRANSISTOR AND MANUFACTURE THEREOF

摘要

PURPOSE:To periodically form shapes of heterojunctions on sawtooths by utilizing different growing speeds according to surface directions by providing a sectional structure having a periodically trapezoidal shape when a grating line is formed on a GaAs substrate. CONSTITUTION:A substrate 10 having a sectional structure of a periodically trapezoidal shape and formed of periodic multiple lines is provided. A sectional structure in which a shape of a heterojunction to be formed by crystalline growing between a first semiconductor region 11 and a second semiconductor region 13 has sawtooth state is provided on the substrate 10. The film 11 formed of periodic multiple lines and the region 13 having smaller electron affinity than that of the region 11 are so provided as to form a heterojunction to the region 11. A curvature of a common boundary when the heterojunction is formed is periodically modulated. Thus, an optimum substrate shape utilizing a surface orientation dependency of a growing speed is obtained.