发明名称 |
Making capacitor structure in a semiconductor device |
摘要 |
A method of making capacitor structure includes arranging first-layer conducting strips on a first layer of an integrated circuit chip, and arranging second-layer conducting strips on a second layer of the integrated circuit chip. The first-layer conducting strips and the second-layer conducting strips can be arranged as respective piecewise spirals. The second-layer conducting strips are arranged overlying and electrically separated from the first-layer conducting strips, and the method further includes electrically connecting the first-layer conducting strips with the second-layer conducting strips.
|
申请公布号 |
US7578858(B1) |
申请公布日期 |
2009.08.25 |
申请号 |
US20060474246 |
申请日期 |
2006.06.23 |
申请人 |
MARVELL INTERNATIONAL LTD. |
发明人 |
SUTARDJA PANTAS |
分类号 |
H04R17/00;H01G4/012;H01G4/228;H01G4/232;H01G9/00;H01L23/522;H01L27/08 |
主分类号 |
H04R17/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|