发明名称 Making capacitor structure in a semiconductor device
摘要 A method of making capacitor structure includes arranging first-layer conducting strips on a first layer of an integrated circuit chip, and arranging second-layer conducting strips on a second layer of the integrated circuit chip. The first-layer conducting strips and the second-layer conducting strips can be arranged as respective piecewise spirals. The second-layer conducting strips are arranged overlying and electrically separated from the first-layer conducting strips, and the method further includes electrically connecting the first-layer conducting strips with the second-layer conducting strips.
申请公布号 US7578858(B1) 申请公布日期 2009.08.25
申请号 US20060474246 申请日期 2006.06.23
申请人 MARVELL INTERNATIONAL LTD. 发明人 SUTARDJA PANTAS
分类号 H04R17/00;H01G4/012;H01G4/228;H01G4/232;H01G9/00;H01L23/522;H01L27/08 主分类号 H04R17/00
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