发明名称 Method of forming pattern of inorganic material film and structure containing the pattern
摘要 A method of forming a pattern of an inorganic material film, which method is more versatile, easy, and practical. The method includes the steps of: (a) forming a sacrifice layer having a pattern on a substrate by employing a material having a different thermal expansion coefficient from that of an inorganic material of the inorganic material film; (b) forming an inorganic material layer on the substrate, on which the sacrifice layer has been formed, at a predetermined deposition temperature by employing the inorganic material; (c) lowering a temperature of at least the inorganic material layer to produce cracks in the inorganic material layer formed on the sacrifice layer; and (d) removing the sacrifice layer and the inorganic material layer formed thereon.
申请公布号 US2008048278(A1) 申请公布日期 2008.02.28
申请号 US20070889646 申请日期 2007.08.15
申请人 FUJIFILM CORPORATION 发明人 HISHINUMA YOSHIKAZU;FUJII TAKAMICHI
分类号 H01L29/84;H01L21/00 主分类号 H01L29/84
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