| 摘要 |
PURPOSE:To successively form with ease a conductive thin film and insulating thin film by a method wherein a thin film of a conductive high-melting metal silicide is formed on a semiconductor body and then is subjected to selective oxidation. CONSTITUTION:A thin film of Ti that is a high-melting metal is formed on the entire surface of a primary plane of a semiconductor body 12 and is subjected to high temperatures in an non-oxidizing atmosphere. This results in the formation of a Ti silicide layer 14 that is a conductive, high-melting silicide. Next, a non- oxidizable mask 18 is formed of Si nitride film on the Ti silicide layer 14 in the bit line region. In an oxidizing atmosphere at high temperatures, the Ti silicide layer 14 not covered by the non-oxidizable mask 18 is oxidized for the formation of a mixture film 19 consisting of a Ti oxide film and Si oxide film. After this, said mixture film retained immediately under a first gate electrode 20 becomes dielectric material 19a for a capacitor.
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