| 摘要 |
To prevent or reduce hillock formation, a thin-film transistor includes a substrate 141 and a gate 149 including a double-layered structure having first metal layer 143 formed of a metal such as AI, Cu or Au exhibiting tensile stress and second metal layer 145 formed of a metal such as Mo, Mo alloy, MoW, MoTa, MoNb exhibiting compressive stress, the first metal layer 143 being wider than the second metal layer 145 by about 1 to 4 Ám. A method of making such a thin film transistor includes the steps of: depositing the first metal layer 143 on the substrate 141, depositing a second metal layer 145 on the first metal layer 143; and patterning the second metal layer 145 and the first metal layer 143 using a single photoresist mask such that the first metal layer 143 is wider than the second metal layer 145. The patterning may be effected by a single isotropic wet etching process, or a mixture of isotropic wet etching and anisotropic dry etching.
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