METHOD AND APPARATUS FOR CONTROLLING DEPOSITION PARAMETERS BASED ON POLYSILICON GRAIN SIZE FEEDBACK

摘要

A processing line (10) includes a deposition tool (30), a metrology tool (50), and a controller (40). The deposition tool (30) is adapted to form a polysilicon layer on a wafer (20) in accordance with a recipe. The metrology tool (50) is adapted to measure a grain size of the polysilicon layer. The controller (40) is adapted to modify the recipe for subsequently formed polysilicon layers based on the measured grain size. A method for controlling a deposition process includes forming a polysilicon layer on a wafer (20) in accordance with a recipe; measuring a grain size of the polysilicon layer; and changing the recipe for subsequently formed polysilicon layers based on the measured grain size.