| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor optical device where crackings and chippings are not likely to occur on a cleavage plane. SOLUTION: The method includes: forming a group III-V compound semiconductor layer 16 comprising Ga, In, and As on an active layer 12 provided on an InP substrate 10; forming a first and second mask 20a and 20b on a first and second region r1 and r2, respectively, in a surface 16s of the group III-V compound semiconductor layer 16; forming a first and second semiconductor mesa 22a and 22b using the mask 20a and 20b, respectively, by etching the active layer 12 and the group III-V compound semiconductor layer 16; forming an InP layer 24 for burying the semiconductor mesa 22a and 22b using the mask 20a and 20b; scribing the second region r2 in the surface 16s of the group III-V compound semiconductor layer 16b along a predetermined line L; and cleaving an InP substrate 10a from a scribe line SL as the starting point. COPYRIGHT: (C)2008,JPO&INPIT
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