PLASMA PROCESSING APPARATUS HAVING ACTIVE BIAS CONTROL CIRCUIT AND CONTROL METHOD OF THE SAME

摘要

A plasma processing apparatus having an active bias control circuit and a control method thereof are provided to process a plasma uniformly by controlling an ion energy within the plasma to be represented through an active bias control and a gas supply control of a main power. A plasma chamber(224) includes an electrostatic chuck for clamping a processed substrate. An electrostatic power source(270) supplies a direct current power to generate electrostatic power. A bias power circuit supplies a high frequency bias power to the electrostatic chuck. A voltage detector(280) detects a voltage which is induced to the electrostatic chuck. A controller(290) controls an output of an RF generator of the bias power circuit based on the induced voltage of the detected electrostatic chuck.