SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE

摘要

The field-effect mobility of a semiconductor device is improved, and the on-state current thereof is increased, so that stable electrical characteristics are obtained. The semiconductor device includes a first oxide insulator, an oxide semiconductor, and a second oxide insulator which are stacked. The first oxide insulator includes In, Zn, and M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf), and the content of In is lower than the content of M, and the content of In is lower than the content of Zn. The oxide semiconductor includes In and M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf), and the content of In is higher than the content of M The second oxide insulator includes In, Zn, and M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf).

主权项

1. A semiconductor device comprising:
a first conductor over a substrate; a first insulator over the first conductor; a first metal oxide over the first insulator to overlap with at least part of the first conductor; an oxide semiconductor in contact with at least part of a top surface of the first metal oxide; a second metal oxide in contact with at least part of a top surface of the oxide semiconductor; a second conductor in contact with at least part of the second metal oxide; and a third conductor in contact with at least part of the second metal oxide and separated from the second conductor, wherein the first metal oxide comprises In, Zn, and M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf), wherein a content of In is lower than a content of M in the first metal oxide, wherein the content of In is lower than a content of Zn in the first metal oxide, wherein the oxide semiconductor comprises In and M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf), wherein a content of In is higher than a content of M in the oxide semiconductor, and wherein the second metal oxide comprises In, Zn, and M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf).