发明名称 Method for Manufacturing Semiconductor Device
摘要 In a manufacturing process of a semiconductor device, a manufacturing technique for reducing the number of lithography processes using a photoresist and simplifying the process is provided, and the throughput is improved. An etching mask for forming a pattern of a layer to be processed such as a conductive layer or a semiconductor layer is manufactured without using a lithography technique that uses a photoresist. The etching mask is formed of a stacked layer structure of a light absorption layer and an insulating layer utilizing laser ablation by laser beam irradiation through a photomask.
申请公布号 US2008050895(A1) 申请公布日期 2008.02.28
申请号 US20070840435 申请日期 2007.08.17
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MIYAIRI HIDEKAZU;HIGA EIJI
分类号 H01L21/44;H01L21/20 主分类号 H01L21/44
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