发明名称 |
Method for Manufacturing Semiconductor Device |
摘要 |
In a manufacturing process of a semiconductor device, a manufacturing technique for reducing the number of lithography processes using a photoresist and simplifying the process is provided, and the throughput is improved. An etching mask for forming a pattern of a layer to be processed such as a conductive layer or a semiconductor layer is manufactured without using a lithography technique that uses a photoresist. The etching mask is formed of a stacked layer structure of a light absorption layer and an insulating layer utilizing laser ablation by laser beam irradiation through a photomask. |
申请公布号 |
US2008050895(A1) |
申请公布日期 |
2008.02.28 |
申请号 |
US20070840435 |
申请日期 |
2007.08.17 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MIYAIRI HIDEKAZU;HIGA EIJI |
分类号 |
H01L21/44;H01L21/20 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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