发明名称 DEPOSITION FILM FORMING
摘要 PURPOSE:To form the deposition layer on a substrate, by introducing the com pound containing silicon and halogen, and the active species made from com pound containing silicon which react mutually to the former compound, and making them react chemically by applying photo energy. CONSTITUTION:The photoconductive material 10 has the layer structure on the supporting body 11. This layer structure is constituted of the intermediate layer 12 which is installed according to necessity and the photoconductive layer 13. This intermediate layer 12 has the function, for example, to prevent effective ly the carrier from flowing from the side of supporting body 11 into the photo- sensitive layer 13, and to allow easily the photo-carrier to pass from the side of photo-sensitive layer 13 to the side of supporting body 11. The photo-sensitive layer 13 is formed in the same way as the intermediate layer 12, that is, the compound containing silicon and halogen, the active species made from com pound containing silicon and film-forming and, according to necessity, the in active gas and the gas of compound containing impurity atom as component, etc. are introduced into the film-forming space in which the supporting body 11 is installed, and the photo-sensitive layer 13 is formed on the intermediate layer 12 formed on the supporting body 11 by applying photo energy.
申请公布号 JPS61220324(A) 申请公布日期 1986.09.30
申请号 JP19850062833 申请日期 1985.03.26
申请人 CANON INC 发明人 ISHIHARA SHUNICHI;KANAI MASAHIRO;ONUKI YUKIHIKO;ODA TOSHIMICHI;SHIMIZU ISAMU
分类号 C23C16/24;G03G5/08;H01L21/205;H01L31/04;H01L31/09 主分类号 C23C16/24
代理机构 代理人
主权项
地址