| 摘要 |
A spin based device can be used as a magnetic field sensor. The device uses ferromagnetic materials for implementing a variable spin resistance to a spin injected current having a particular spin value. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the ferromagnetic layers to be parallel or antiparallel, thus changing the resistance of the device to an electron current of a particular spin orientation.
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