| 摘要 |
PROBLEM TO BE SOLVED: To obtain an exposure mask, a method for manufacturing the mask and a method for forming a pattern so that a cell can be finished to its most end part in a desired dimension without using a dummy pattern, therefore, without increasing the cell area. SOLUTION: The end part of the memory cell is subjected to optical proximity correction/process proximity correction(PPC) so as to decrease the dimensional difference in the finished pattern in the end region of the memory cell. By subjecting the end part of the memory cell to the PPC, the cell can be finished to the most end part of the cell into a desired dimension without increasing the cell area. Since the mask dimension of the end part of the cell can be determined by the PPC, the designer is not required to change the design of the cell end even when the conditions for the lithographic process are changed. That is, the optimum mask dimension of the cell end can be obtained only by changing the rule of the PPC according to the changes in the lithographic process, and this results in the decrease in the load relating to designing. |
