发明名称 DIODENSTRUKTUR, INSBESONDERE FÜR DÜNNFILMSOLARZELLEN
摘要 The invention relates to a diode structure, especially for thin film solar cells. The aim of the invention is to provide a diode structure for thin film solar cells. Said structure allows for an assembly of a thin film solar cell, whereby said assembly is as flexible as possible, efficiency is high, and utilizing materials that are as environmentally friendly as possible. A diode structure comprising a p-conducting layer, which consists of a chalcopyrite compound, and a n-conducting layer, which is adjacent to the p-conducting layer and consists of a compound that contains titanium and oxygen, is provided.
申请公布号 AT407455(T) 申请公布日期 2008.09.15
申请号 AT20000972800T 申请日期 2000.10.18
申请人 SHELL ERNEUERBARE ENERGIEN GMBH 发明人 KARG, FRANZ
分类号 H01L31/032;H01L31/04;H01L31/0336;H01L31/072;H01L31/0749 主分类号 H01L31/032
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