SEMICONDUCTOR LASER DIODE

摘要

The device is for reducing the threshold voltage and for enhancing the reliability of the active layer by maximizing the optical gain of the semiconductor laser diode. The device is characterized by having an active layer of double-heterostructure or quantum well structure so that the active layer has the composition of M(x)Ga(1-x)As and the x value is varied in order to grade the composition of the edge of the active layer where the center of the active layer and the cladding layer are adjacent.