发明名称 METHOD FOR EPITAXIAL GROWTH OF SCANTY SOLUBLE AMPHIPHILOUS MATERIAL
摘要 FIELD: producing single-layer and multilayer structures of low- and high- molecular compounds. SUBSTANCE: method involves transfer of surface layer of low-concentration liquid phase of scanty soluble amphiphilous material to substrate while monitoring surface pressure at interface between liquid phase and atmosphere and adjusting it by means of barrier compression. Growth is effected on plant vibration-proof to degree at which surface pressure measuring system does not respond to vibrations as low as 0.05 mN /m; each phase is formed in distilled water whose surface pressure at water-to-atmosphere interface is 72 1 mN/m and held in plant until quasi-equilibrium state is attained whereupon substrate is immersed in liquid phase at rate of at least 5 mm/min; then substrate is removed at rate of 1-2 mm/min; when surface layer is transferred to substrate, surface pressure is controlled at interface between each phase and atmosphere to meet equation <EMI ID=0.446 HE=6 WI=33 TI=CHI>, where pi is desired surface pressure; pi<SB>int</SB> is surface pressure at interface between liquid phase and atmosphere in quasi-equilibrium state. EFFECT: improved reliability of method. 4 cl, 2 dwg, 6 tbl
申请公布号 RU2137250(C1) 申请公布日期 1999.09.10
申请号 RU19980121893 申请日期 1998.11.30
申请人 TSENTR TEKHNOLOGII MIKROEHLEKTRONIKI 发明人 LUCHININ V.V.;DUNAEV A.N.;PASJUTA V.M.
分类号 H01L21/208 主分类号 H01L21/208
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