| 摘要 |
PURPOSE:To simplify a manufacturing step and to improve light transmittance by forming an ohmic electrode layer made of continuous amorphouslike carbon or graphite when a diamond layer is grown as a semiconductor layer. CONSTITUTION:A metallic layer 2 made of tungsten W is formed on the first main face of a semiconductor layer 1 made of p-type diamond doped with boron B, and a Schottky barrier is formed between both. An amorphouslike carbon or graphite layer 3 formed by altering film forming condition when the layer 1 is grown is formed, and an ohmic junction is formed therebetween. Thus, since it is composed of the p-type diamond, its manufacture is facilitated, and since the ohmic electrode layer is formed of the amorphouslike carbon or graphite, light transmittance is improved, and accordingly a light emitted on a Schottky junction face is efficiently emitted externally. |
