| 发明名称 | Semiconductor diode and method of manufacturing a semiconductor diode | ||
| 摘要 | A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other. | ||
| 申请公布号 | US9385181(B2) | 申请公布日期 | 2016.07.05 |
| 申请号 | US201414162311 | 申请日期 | 2014.01.23 |
| 申请人 | Infineon Technologies AG | 发明人 | Felsl Hans Peter;Falck Elmar;Pfaffenlehner Manfred;Hille Frank;Haertl Andreas;Schulze Holger;Schloegl Daniel |
| 分类号 | H01L29/861;H01L29/06;H01L29/66;H01L29/36;H01L29/16;H01L29/20 | 主分类号 | H01L29/861 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A semiconductor diode, comprising: a semiconductor body having opposite first and second sides; a first and a second semiconductor region consecutively arranged along a lateral direction at the second side, wherein the first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side; and a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side, wherein the second and third semiconductor regions are separated from each other, and the first semiconductor region of the first conductivity type contacts another semiconductor region of the first conductivity type. | ||
| 地址 | Neubiberg DE | ||