| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high luminance, high life light-emitting element, an epitaxial wafer for light-emitting element, and to provide its manufacturing method. <P>SOLUTION: In a light-emitting element where an n-type clad layer (4) composed of (Al<SB>x</SB>Ga<SB>1-x</SB>)<SB>y</SB>In<SB>1-y</SB>P (0≤x≤1, 0≤y≤1; including such a case as the mixed crystal ratios x and y are different in each layer), an active layer (5), a p-type clad layer (6), a p-type interposer (7), and a p-type window layer (8) are formed on a substrate (2); a surface electrode (9) is formed partially on the p-type window layer (8); and a back electrode (1) is formed on the backside of the substrate (2); a p-type dopant and an n-type dopant are doped to the p-type interposer (7). <P>COPYRIGHT: (C)2008,JPO&INPIT |
