| 摘要 |
PURPOSE:To obtain high and stable performance by forming an insulating organic layer on a metal electrode by electrolytic polymerizing method, forming a semiconductor layer thereon, and further forming a conductive layer to become an electrode thereon. CONSTITUTION:An Al electrode 14 is formed on a glass substrate 15 as an operating electrode. A poly alpha-naphthole layer 12 is precipitated as an insulating organic polymer layer on the electrode to obtain an insulating organic polymer sample. A poly N-methylpyrrole film 11 is precipitated as a pi-conjugate polymer layer on the sample, and an Au electrode 10 is formed on the film 11. A MIS diode having high performance and stable performance can be readily formed by the above manufacturing method. |
