SEMICONDUCTOR PIXEL UNIT FOR SENSING NEAR-INFRARED LIGHT, OPTIONALLY SIMULTANEOUSLY WITH VISIBLE LIGHT, AND A SEMICONDUCTOR SENSOR COMPRISING SAME

摘要

A semiconductor pixel unit for sensing near-infrared light, and for optionally simultaneously sensing visible light. The pixel unit comprises a single substrate with a first semiconductor region and a second semiconductor region electrically separated by an insulating region, for example a buried oxide layer. The pixel unit is adapted for generating a lateral electrical field in the second region for facilitating transport of photoelectrons generated in the second region by near-infrared light passing through the first region and the insulating region.

主权项

1. A semiconductor pixel unit adapted for simultaneously sensing visible light and near-infrared light, the semiconductor pixel unit comprising:
a single semiconductor substrate comprising a first semiconductor region and a second semiconductor region electrically separated from the first semiconductor region by means of an insulating region, the first semiconductor region comprising at least one visible light detector for detecting photoelectrons generated in the first semiconductor region by the visible light, means for generating a lateral electrical field in a region underneath the first semiconductor region, the electrical field being adapted for facilitating transport of photoelectrons generated in the second semiconductor region by the near-infrared light after passing through the first semiconductor region and through the insulating region, the second semiconductor region comprising at least one near infrared light detector located at the surface of the semiconductor substrate for detecting the photoelectrons generated in the second semiconductor region by the near infrared light.