| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an inexpensive, simple and highly efficient semiconductor device, by which a formation and a dislodging of a barrier metal are unnecessary, and to provide the highly efficient semiconductor device having a detailed bump formed with a narrow pitch. <P>SOLUTION: The method of manufacturing the semiconductor device at least comprises the steps of: forming plural electrode pads 12 on one principal plane of a semiconductor substrate 10, forming insulating layers (for example, inorganic insulating layers 14 and organic insulating layers 16) by covering peripheries of the electrode pads 12, selectively forming mask layers 20 on the insulating layers 14, 16, cleaning front surfaces of the electrode pads 12 which are not covered with the insulating layers 14, 16, forming external connecting terminals 46 in contact with the electrode pads 12 in regions defined by the insulating layers 14, 16, and eliminating the mask layers 20. <P>COPYRIGHT: (C)2007,JPO&INPIT |
