| 摘要 |
PURPOSE: To obtain high resolution performance, high dry etching resistance and excellent dimensional controllability and to make it possible to execute pattern formation with high throughput at a low cost by irradiating a silicon- contg. resist film on a substrate with light to photooxidize this film and developing the film, thereby forming resist patterns. CONSTITUTION: A photosensitive material which contains >=80wt.% compd. of polymers or oligomers having Si-O bonds and Si-arom. functional base bonds or a mixture composed thereof and is formed on a substrate 1 having a work on its front surface is selectively irradiated with the light 3 of a wavelength of <=250nm in the atm. or oxygen atmosphere, by which the exposed parts are photooxidized. This material is then developed to selectively remove the exposed parts or other parts, by which the resist patterns 8 are formed. The work is etched by using such resist patterns 8. In such a case, the resist patterns 8 of >=1:1 in the ratio of the O atoms to Si atoms are preferably used. |
