| 摘要 |
<p>PURPOSE:To obtain a read circuit having a ROM with a small chip size without failing in high speed read. CONSTITUTION:An inverter 40 is formed by a pM0S transistor Q38 and an nMOS transistor Q39, the source of the pMOS transistor Q38 is connected to the output node 24 of internal generated source 33. Thus, when an input signal Yn is an L, the pMOS transistor Q38 is turned ON, and the nMOS transistor Q39 is turned OFF and then a VBH is outputted. Further, when the input is an H, the pMOS transistor Q38 is turned OFF, and the nMOS transistor Q39 is turned ON and then GND is outputted. Further, the column line GL of a memory matrix 37 is connected to the output of the inverter 40 directly. Thus, two nMOS transistors arranged on the column line necessary usually are unnecessitated.</p> |
