发明名称 HYBRID MATRIX FOR THIN-LAYER TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a hybrid semiconductor material and a device containing the same. SOLUTION: The hybrid semiconductor material includes an organic semiconductor matrix in which semiconductor nano-objects grafted by organic entities are dispersed, the organic matrix comprising small semiconductor molecules and the organic entities having an active electrical function similar to those of the small semiconductor molecules. The hybrid semiconductor material has applications in the field of mass consumer electronics, in particular. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009088507(A) 申请公布日期 2009.04.23
申请号 JP20080237566 申请日期 2008.09.17
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 SIMONATO JEAN-PIERRE;CELLE CAROLINE
分类号 H01L51/30;C01B33/02;H01L29/06;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L51/30
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