| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an IC with a large power capacity by a method wherein oxygen ions are implanted into one of the main surfaces of a semiconductor substrate to form an SiO2 layer and, further, a polycrystalline layer is formed on that surface and the semiconductor substrate is heated to convert the polycrystalline layer into a single crystal recrystallized layer or a recrystallized layer having large crystal grain boundaries. SOLUTION: Oxygen ions are implanted into one of the main surfaces of a semiconductor substrate 10 which is subjected to a heat treatment to form an SiO2 layer 11 at the depth about 0.1-0.4μm from the surface of the semiconductor substrate 10. Then a polycrystalline silicon layer 12 is built up on that main surface of the semiconductor substrate 10 and the surface of the polycrystalline silicon layer 12 is heated by a laser or a heating lamp to convert the polycrystalline silicon layer 12 into a single crystal recrystallized layer 13 or a recrystallized layer 13 having large crystal grains. With this constitution, an IC with a large power capacity can be manufactured.
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