MOSFET STRUCTURE AND METHOD FOR MANUFACTURING SAME

摘要

Provided is a MOSFET comprising: a substrate (100); a gate stack (500) on the substrate (100); source/drain regions (305) in the substrate on both sides of the gate stack (500); an interlayer dielectric layer (400) covering the source/drain regions; and source/drain extension regions (205) under edges on both sides of the gate stack (500); wherein insulators, which are not connected each other, are formed beneath the source/drain extension regions (205) under edges on both sides of the gate stack (500). By means of the MOSFET in the present disclosure, negative effects induced by DIBL on device performance can be effectively reduced.

主权项

1. A method for manufacturing a MOSFET, comprising:
a. providing a substrate (100) and a dummy gate (101), wherein the dummy gate (101) is made of silicon dioxide; b. forming a rectangular spacer (102) on both sides of the dummy gate (101), wherein the spacer is made of silicon nitride; c. depositing a silicon dioxide layer (105) on both sides of the rectangular spacer (102), wherein the silicon dioxide layer (105) is flush with the dummy gate (101); d. removing the rectangular spacer (102) and anisotropically etching the exposed substrate to form a first vacancy (106); e. filling an insulator (200) into the first vacancy (106); f. thinning the insulator to form a second vacancy (107); g. performing an epitaxial growth with the silicon on sidewalk of the second vacancy as a seed layer, so as to form a silicon layer (205) to fill into the second vacancy (107); and h. removing the silicon dioxide layer (205) to expose the substrate (100) and the silicon layer (205).