| 摘要 |
<p>In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non volatile storage elements are programmed based on a lower page of data to have a voltage threshold (V<SUB>TH</SUB>) that falls within a first V<SUB>TH</SUB> distribution or a higher, intermediate V<SUB>TH</SUB> distribution. Subsequently, the non-volatile storage elements with the first V<SUB>TH</SUB> distribution either remain there, or are programmed to a second V<SUB>TH</SUB> distribution, based on an upper page of data. The non-volatile storage elements with the intermediate V<SUB>TH</SUB> distribution are programmed to third and fourth V<SUB>TH</SUB> distributions. The non-volatile storage elements being programmed to the third V<SUB>TH</SUB> distribution are specially identified and tracked. Verification of the non-volatile storage elements being programmed to the fourth V<SUB>TH</SUB> distribution is initiated after one of the identified non-volatile storage elements transitions to the third V<SUB>TH</SUB> distribution from the intermediate V<SUB>TH</SUB> distribution.</p> |
