| 摘要 |
<p>A transistor of a semiconductor device and its manufacturing method are provided to secure sufficiently a driving current for the transistor and to suppress the short channel effect by forming a gate electrode containing an HfN(Hafnium nitride) on a gate dielectric layer. A transistor of a semiconductor device comprises a gate dielectric layer(102) containing a composite oxide substance and a silicon, which is formed at a predetermined region of a semiconductor substrate(100). A gate electrode(104) is formed on the gate dielectric layer. And the gate electrode contains an HfN(Hafnium nitride).</p> |
