Rate equation method and apparatus for simulation of current in a mos device

摘要

An improved method for modeling electrical behavior in a MOSFET semiconductor device is disclosed wherein a rate equation qualitatively predicts electrical behavior, including electron migration and current, across a boundary imposed by the difference in doping the source and the channel. Quantitative values of the electrical behavior are skewed when doping levels in the device are unknown. However, the qualitative result may be used, regardless of knowledge of the doping levels, to design MOSFET devices which exhibit more desirable electric behavior. The rate equation may further be used to simulate the behavior of a MOSFET device in a computer simulation program. Because mobility and diffusion factors, which break down with shrinking gate dimensions, are eliminated from the instant rate equation, the electrical behavior of smaller devices is simpler to calculate than with classical rate equations.