发明名称 Temperature sensing circuit
摘要 A temperature sensing circuit (100) for sensing the temperature of an active semiconductor device, for example, a power MOSFET (11) of a semiconductor body (10). The circuit has a first temperature sensing device (R1R2) provided on the semiconductor body at a first position (P1) adjacent a periphery (12) of the active semiconductor device (11), a second temperature sensing device (R3,R4) provided on the semiconductor body at a second position (P2) further from the periphery of the active semiconductor device than the first position. An arrangement, for example, a comparator responsive to the first and second temperature sensing devices provides a control signal to switch off the active semiconductor device (11) when the difference in the temperature sensed by the first and second sensing devices reaches a predetermined value.
申请公布号 US5563760(A) 申请公布日期 1996.10.08
申请号 US19910760560 申请日期 1991.09.16
申请人 U.S. PHILIPS CORPORATION 发明人 LOWIS, ROYCE;EILLEY, EDWARD S.;MOODY, PAUL T.;KORTELING, AART G.;KELLEY, BRENDAN P.
分类号 G01K7/01;G01K3/10;G01K3/14;H01L29/78;H03K17/08;H03K17/14;(IPC1-7):H02H5/04 主分类号 G01K7/01
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