发明名称 |
Temperature sensing circuit |
摘要 |
A temperature sensing circuit (100) for sensing the temperature of an active semiconductor device, for example, a power MOSFET (11) of a semiconductor body (10). The circuit has a first temperature sensing device (R1R2) provided on the semiconductor body at a first position (P1) adjacent a periphery (12) of the active semiconductor device (11), a second temperature sensing device (R3,R4) provided on the semiconductor body at a second position (P2) further from the periphery of the active semiconductor device than the first position. An arrangement, for example, a comparator responsive to the first and second temperature sensing devices provides a control signal to switch off the active semiconductor device (11) when the difference in the temperature sensed by the first and second sensing devices reaches a predetermined value.
|
申请公布号 |
US5563760(A) |
申请公布日期 |
1996.10.08 |
申请号 |
US19910760560 |
申请日期 |
1991.09.16 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
LOWIS, ROYCE;EILLEY, EDWARD S.;MOODY, PAUL T.;KORTELING, AART G.;KELLEY, BRENDAN P. |
分类号 |
G01K7/01;G01K3/10;G01K3/14;H01L29/78;H03K17/08;H03K17/14;(IPC1-7):H02H5/04 |
主分类号 |
G01K7/01 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|