| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a gallium nitride compound semiconductor excellent in crystalinity. SOLUTION: An SiN buffer body is discretely formed on a board 10, over which a GaN buffer layer is formed at a low temperature, and a GaN semiconductor layer 16 thereon at a high temperature. By discretely forming the SiN buffer body, crystal growth of a low-temperature buffer layer depending on board is prevented, promoting single crystallization of a seed crystal at growing of the GaN buffer layer 16. Further, an SiO2 30 is discretely formed on the board 10 to allow the GaN semiconductor layers 16 associate together on the SiO2 30, resulting is relaxed distortion. |
