Buffer layers for metal oxide semiconductors for TFT

摘要

The present invention generally relates to a thin film semiconductor device having a buffer layer formed between the semiconductor layer and one or more layers. In one embodiment, a thin film semiconductor device includes a semiconductor layer having a first work function and a first electron affinity level, a buffer layer having a second work function greater than the first work function and a second electron affinity level that is less than the first electron affinity level; and a gate dielectric layer having a third work function less than the second work function and a third electron affinity level that is greater than the second electron affinity level.

主权项

1. A thin film semiconductor device, comprising:
a gate electrode disposed over a substrate; a gate dielectric layer disposed over the gate electrode, the gate dielectric layer having a third work function, the third work function being less than a second work function; a buffer layer disposed over the gate dielectric layer, the buffer layer having the second work function, the second work function being greater than a first work function, and a second electron affinity level that is less than a first electron affinity level; a semiconductor layer disposed over the buffer layer, the semiconductor layer having the first work function and the first electron affinity level; a source electrode disposed over the semiconductor layer; and a drain electrode disposed over the semiconductor layer.