| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, in which current collapse phenomenon is suppressed. SOLUTION: The semiconductor device 111 includes, on the upper surface thereof, a current collapse suppression film 125 constituted of molecules whose molecular orientation is controlled so that the positive charge part of permanent bipole in the molecule is faced downward. Such orientation control becomes possible by digging a groove 159 on an insulating film 123. The current collapse phenomenon caused by an electron trapped in a semiconductor substrate 121 after impressing high voltage can be suppressed nicely by the effect of the current collapse suppression film 125. COPYRIGHT: (C)2008,JPO&INPIT |
