| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for growing a sapphire crystal, by which the time for crystal growth can be saved, the cost can be reduced, the mass or size of a crystal is not limited, and qualities can satisfy the requirements of high functions for optics or semiconductor and communication elements. <P>SOLUTION: A single crystal sapphire is obtained by grinding alumina (Al<SB>2</SB>O<SB>3</SB>) powder into ultrafine powder granules, purifying the granules to 99.999% or more purity, spray granulating, adding an organic binder to the granules and pressing, subjecting the pressed material to a burn-in process to obtain a half-done alumina block prior to putting the material in a vacuum ultra-high temperature furnace, then heating into a melt state, growing a crystal, solidifying, cooling and shrinking. <P>COPYRIGHT: (C)2008,JPO&INPIT |
