| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a magnetic thin film element, a magnetic thin film memory element, and a recording and reproducing method for this memory element in which a preservation state of magnetic information is high, high integration and reliability can be realized, stable recording/reproduction can be performed, manufacturing margin of a non-magnetic layer is wide, a reproducing time is short, and a reproducing method having less noise cn be realized. SOLUTION: A first magnetic layer 1 having closed magnetic path structure and a low coercive force a second magnetic layer 2 having closed magnetic path structure and a high coercive force are laminated through a non-magnetic layer 3 consisting of insulators 4, the first magnetic layer 1 and the second magnetic layer 2 have easy shafts of CCW or CW, and they have different resistance depending on a relative angle of the magnetization direction of the first and the second magnetic layers 1, 2.</p> |
