イオン発生装置及びその製造方法,申请号JP20160528874-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	イオン発生装置及びその製造方法
摘要	本発明は、合成樹脂板と；合成樹脂板の一面に形成され、少なくとも１つの放電針を有する銅放電電極と；合成樹脂板の他面に形成された接地電極と；銅放電電極にコーティングされた金属コーティング層とを含むことによって、製造コストを低減し、寿命を最大化できるという利点がある。【選択図】図１
申请公布号	JP2016537773(A)	申请公布日期	2016.12.01
申请号	JP20160528874	申请日期	2014.11.07
申请人	エルジーエレクトロニクスインコーポレイティド	发明人	スン，ボンジョ;ジャン，ジャエソー;ソン，イルナ
分类号	H01T23/00;A61L9/00;A61L9/22;H01T19/04	主分类号	H01T23/00
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Fremgangsmate for a redusere virkningen av multippel-reflektert energi i registrerte seismiske signaler

MASK DEPOSITION METHOD AND DEVICE, MASK AND FABRICATION METHOD OF MASK, DISPLAY PANEL FABRICATION DEVICE, DISPLAY PANEL AND ELECTRONIC APPARATUS INCREASING A CONTACT PROPERTY

METHOD FOR IMMEDIATELY ACCESSING VMS

UNIVERSAL HOLDER FOR MOBILE TELEPHONES, REMOTE CONTROLS AND OTHER OBJECTS FEATURING SMOOTH OUTER SURFACE

PERSONAL ALARM SYSTEM

Anvendelse av spesifikk dose av fondaparinux-natrium for behandling av ACS

LATENT HARDENER FOR PRODUCING ADHESIVE HARDENABLE AT LOW TEMPERATURE IN SHORT TIME AND HAVING EXCELLENT SHELF STABILITY, MANUFACTURING METHOD THEREOF AND ADHESIVE COMPRISING THE SAME

Polymorf form av takykininreseptorantagonisten 2-(R)-(1-(R)-(3,5-bis(trifluorometyl)fenyl)etoksy)-3-(S)-(4-fluor)fenyl-4-(3-5(-okso-1H,4H-1,2,4-triazolo)metylmorfolin

Snofreser med hoydejustering

SUBSTRATE GLASS COMPOSITION FOR PLASMA IMAGE DISPLAY PANEL, INCREASING DEFORMATION POINT AND TRANSITION POINT AND HAVING LOW EXPANSIBILITY

APPARATUS FOR MEASURING AUTOMATICALLY WITHSTAND VOLTAGE OF ARMATURE MOLDING SHAFT

FILLER-FIBER COMPOSITE MATERIAL CAPABLE OF MANUFACTURING PAPER HAVING OPTICAL PROPERTIES AND PHYSICAL PROPERTIES

PAVEMENT METHOD OF ELASTIC PERMEABLE ROAD

FILLER TRIM FOR VEHICLE WITH SEAT BELT WEBBING FUNCTION

COAXIAL MULTI-TRANSFORM WIDE-BAND RF DISTRIBUTOR

FISH SHAPED FRESH BREAD WITH HIGH QUALITY AND METHOD FOR PRODUCING THE SAME

PROCESS FOR POLYMERIZING CYCLIC OLEFIN CONTAINING POLAR FUNCTIONAL GROUP

MASK FOR FORMING FLOATING GATE OF FLASH MEMORY AND METHOD FOR FABRICATING FLASH MEMORY BY USING THE SAME

METHOD FOR ELIMINATING PARTICLES OF SEMICONDUCTOR DEVICE