ELECTRONIC DEVICE INCLUDING MOAT POWER METALLIZATION IN TRENCH

摘要

An electronic device is provided. The electronic device includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, circuitry disposed on the dielectric layer that includes interconnected cells, first contact line metallization and second contact line metallization, first power metallization disposed in-plane with or above the circuitry and second power metallization disposed in a trench defined in at least the dielectric layer. The electronic device further includes insulation disposed to insulate the second power metallization from the circuitry and the first power metallization at first locations and to permit electrical communication between the second power metallization, the circuitry and the first power metallization at second locations.

主权项

1. An electronic device, comprising:
a semiconductor layer; a dielectric layer disposed on the semiconductor layer; circuitry disposed on the dielectric layer and comprising interconnected cells, first contact line metallization and second contact line metallization; first power metallization disposed in-plane with or above the circuitry; second power metallization disposed in a trench defined in at least the dielectric layer; and insulation disposed to insulate the second power metallization from the circuitry and the first power metallization at first locations and to permit electrical communication between the second power metallization, the circuitry and the first power metallization at second locations.