| 摘要 |
A method for manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) implanting an impurity into a surface layer of an SiC substrate at a concentration of 1×1020 cm−3 or higher, (b) forming a graphite film on a surface of the SiC substrate after the step (a), (c) activating the impurity by annealing the SiC substrate after the step (b), (d) removing the graphite film after the step (c), (e) oxidizing the surface of the SiC substrate to form an oxide film after the step (d), (f) removing the oxide film, and (g) measuring resistance of the SiC substrate by a four-point probe method after the step (f). |
