| 摘要 |
Provided is a method for increasing pattern density on a substrate comprising a structure with a patterned layer with a first composition and a cap layer and a sidewall of a second composition formed on the structure. The sidewall is exposed to a chemical environment and creates a chemically modified sidewall layer of a third composition. The cap layer and an interior and non-modified portion of the structure are removed by using an etching process to leave behind the chemically modified sidewall layer. A pattern transfer etch of the sidewall chemically modified layer onto the underlying layer of the substrate is performed. One or more integration operating variables are controlled to achieve target critical dimensions comprising width, height, sidewall angle, line width roughness, and / or line edge roughness of the structure. |
